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BAV199ST/R7

Description
Rectifier Diode, 4 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    diode   
File Size141KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAV199ST/R7 Overview

Rectifier Diode, 4 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

BAV199ST/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codecompliant
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G6
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse current0.08 µA
Maximum reverse recovery time3 µs
Reverse test voltage75 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAV199ST/R7 Preview

Download Datasheet
BAS116TW/BAW156DW/BAV170DW/BAV199S
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE
FEATURES
Suface mount package ideally suited for automatic insertion.
Very low leakage current. 2nA typical at VR=75V.
Low capacitance. 2pF max at VR=0V, f=1MHz
In compliance with EU RoHS 2002/95/EC directives
100 Volts
POWER
200mWatts
MECHANICAL DATA
• Case: SOT-363 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.008 gram
• Marking: BAS116TW :PA,BAW156DW :P4,BAV170DW :P3,BAV199S :PB
ABSOLUTE RATINGS (each diode)
PA RA ME TE R
R e ve r s e Vo l t a g e
P e a k R e ve r s e Vo l t a g e
C o nti nuo us F o r wa r d C ur r e nt
N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us
I
S ym b o l
V
R
V
RM
I
Va lue
75
100
0.2
4
.0
Uni ts
V
V
A
A
F
FSM
THERMAL CHARACTERISTICS
PA RA ME TE R
P o we r D i s s i p a ti o n (No te 1 )
The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt ( No te 1 )
J u n c t i o n Te m p e r a t u r e
S t o r a g e Te m p e r a t u r e
S ym b o l
P
TOT
R
θ
J A
T
J
T
S TG
Va lue
200
625
-55 to 150
-55 to 150
O
Uni ts
mW
C /W
O
C
C
O
6
5
4
6
5
4
6
5
4
6
5
4
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
1
2
3
1
2
3
1
2
3
1
2
3
Fig.48
Fig.51
Fig.52
Fig.32
BAS116TW
REV.0.1-FEB.11.2009
BAW156DW
BAV170DW
BAV199S
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