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BAV19

Description
0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size61KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35

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BAV19~BAV21
SWITCHING DIODES
VOLTAGE
120~250 Volts
POWER
500 mWatts
FEATURES
Fast switching Speed.
Electrically ldentical to Standerd JEDEC
High Conductance
Axial lead Package ldeally Suited for Automatic lnsertion.
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
3.0
• Case: Molded Glass DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PA RA M E TE R
R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h R e s i s t i ve
L o a d a nd f > = 5 0 H z
P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 s
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5
O
C
M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 )
M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
R
V
RM
I
F ( A V )
I
F S M
P
to t
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
, T
S T G
B AV 1 9
100
120
B AV 2 0
150
200
200
1 .0
500
1 .0
0 .1
3 .0
50
350
-5 5 to +1 5 0
B AV 2 1
200
250
U N IT S
V
V
mA
A
mW
V
µ
A
pF
ns
O
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=30mA to I
R
=-3mA, V
R
=6Volts, R
L
=100Ω
STAD-FEB.06.2009
1
PAGE . 1
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