BAV19 datasheet, PDF - EEWORLD Datasheet

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BAV19: Description0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size75KB，3 Pages; ManufacturerNanjing International Group Co.,Ltd

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0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35

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BAV19, BAV20, BAV21

Silicon Epitaxial Planar Diodes

Max. 0.5

High Voltage Switching Diodes

Max. 1.9

Black

Cathode Band

Black

Part No.

Min. 27.5

XXX

Max. 3.9

Min. 27.5

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (T

= 25

Parameter

Repetitive Peak Reverse Voltage

Reverse Voltage

BAV19

BAV20

BAV21

BAV19

BAV20

BAV21

Symbol

RRM

FRM

at t = 1 s

at t = 100

μs

at t = 1

μs

FSM

tot

stg

Value

120

200

250

100

150

200

250

625

500

175

- 65 to + 175

Unit

Continuous Forward Current

Repetitive Peak Forward Current

Non-repetitive Peak Forward Surge Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

Characteristics at T

= 25

Parameter

Reverse Breakdown Voltage

at I

= 100 µA

Reverse Current

at V

= 100 V

at V

= 150 V

at V

= 200 V

at V

= 100 V, T

= 150

at V

= 150 V, T

= 150

at V

= 200 V, T

= 150

Forward Voltage

at I

= 100 mA

at I

= 200 mA

Diode Capacitance

at V

= 0 V, f = 1 MHz

Reverse Recovery Time

at I

= I

= 30 mA, I

= 3 mA, R

= 100

Ω

BAV19

BAV20

BAV21

BAV19

BAV20

BAV21

BAV19

BAV20

BAV21

Symbol

(BR)R

Min.

120

200

250

Max.

100

1.25

Unit

µA

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