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BAV16W_04

Description
SURFACE MOUNT SWITCHING DIODES
File Size30KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SURFACE MOUNT SWITCHING DIODES

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DATA SHEET
BAV16W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Surface Mount Package ldeally Suited for Automatic lnsertion.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.154(3.90)
.141(3.60)
.110(2.8)
.098(2.5)
100 Volts
POWER
350 mWatts
SOD-123
Unit: inch (mm)
.028(0.7)
.019(0.5)
MECHANICAL DATA
• Case: SOD-123 plastic case.
• Terminals : Solderable per MIL-STD-202,Method 208
• Standard packaging: 8mm tape
• Weight: approximately 0.0104 g
• Marking: A6
.008(.20)MAX
.005(.12)MAX
.016(.40)MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PA R A M E TE R
R ever e Volage
s
t
P eak R ever e Volage
s
t
R M S Volage
t
M axi um D C B l cki g Volage
m
o n
t
M axi um A ver ge For ar C urentatTa=25
O
C
m
a
w d
r
P eak For ar S ur e C urent 1. us
w d
g
r , 0
P ow erD i si aton D er t A bove 25
O
C
s p i
ae
M axi um For ar Volage
m
w d
t
M axi um D C R ever e C urentatR at d D C B l cki g Volage
m
s
r
e
o n
t
T
J
= 25
O
C
Juncton C apaciance(N ot s1)
i
t
e
M axi um R ever e R ecover ( ot s2)
m
s
y N e
M axi um Ther alR esi t nce
m
m
sa
S t r ge Tem per t r R ange
oa
aue
S YM B O L
B AV 16W
75
100
50
75
150
2
350
0. 55 /0. 1A
8
0
1. @ 75V
0
2.
0
6.
0
450
- 5 t +150
5 o
O
.053(1.35)
.037(0.95)
.071(1.8)
.055(1.4)
UNI S
T
V
V
V
V
mA
A
mW
V
uA
pF
ns
C /W
O
V
R
V
RM
V
RM S
V
DC
I
AV
I
FSM
P
TO T
V
F
I
R
CJ
T
RR
RθJA
T
J
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-JUL.30.2004
PAGE . 1
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