BAT46W datasheet, PDF - EEWORLD Datasheet

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BAT46W: DescriptionDC reverse withstand voltage (Vr): 100V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1V @ 250mA 100V, 0.15A, VF=1V@250mA; CategoryDiscrete semiconductor diode; File Size658KB，4 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BAT46W Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1V @ 250mA 100V, 0.15A, VF=1V@250mA

BAT46W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	JCET
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.25 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	0.75 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	0.075 A
Maximum repetitive peak reverse voltage	100 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

BA T46W

SCHOTTKY

BARRIER

DIODE

SOD-123

FEATURES

High breakdown voltage

Low turn-on voltage

Guard ring construction for transient protection

MARKING: S9

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

Maximum Ratings @T

=25℃

Parameter

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

Forward continuous current

Repetitive

peak forward current

(Note 1) @ tp < 1.0s, Duty Cycle < 50%

Non-repetitive Peak

Forward

surge current

@ t =

8.3ms

Power

dissipation

Thermal

resistance junction

ambient

air

Junction temperature

Storage temperature

Symbol

RRM

RWM

FRM

FSM

θJA

STG

Limit

100

150

350

750

500

200

125

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage(Note 2)

Symbol

Test

Conditions

Min

100

0.3

0.5

0.25

0.45

µA

Typ

Max

Unit

= 100µA

=1.5V

=10V

=50V

=75V

=0.1mA

=10mA

=250mA

=0, f=1MHz

=1V, f=1MHz

Reverse voltage leakage current

Forward voltage(Note 2)

Diode capacitance

Notes: 1. Part mounted on FR-4 board with recommended pad layout.

2. Short duration pulse test used to minimize self-heating effect.

www.cj-elec.com

E,Mar,2015

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