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BAS70WS

Description
DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V @ 15mA 70V, 0.07A, VF=0.41V@1mA
CategoryDiscrete semiconductor    diode   
File Size631KB,4 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAS70WS Overview

DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V @ 15mA 70V, 0.07A, VF=0.41V@1mA

BAS70WS Parametric

Parameter NameAttribute value
MakerJCET
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.41 V
Maximum non-repetitive peak forward current0.1 A
Number of components1
Maximum operating temperature125 °C
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Base Number Matches1

BAS70WS Preview

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS70WS
SCHOTTKY BARRIER DIODE
SOD-323
FEATURES
Low Turn-on Voltage
Fast Switching
PN Junction Guard for Transient and ESD Protection
Designed for Surface Mount Application
Plastic Material –UL Recognition Flammability
Classification 94V-O
MARKING: K73
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance
from
Junction to Ambient
Junction temperature
Storage Temperature
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
P
D
R
θJA
T
J
T
STG
70
100
200
500
125
-55
~+150
mA
mA
mW
℃/W
70
V
Limit
Unit
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F1
V
F2
I
R
C
T
t
rr
Min
Typ
Max
0.41
1
100
2
5
Unit
V
V
nA
pF
ns
Conditions
I
F
=1mA
I
F
=15mA
V
R
=50V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
www.cj-elec.com
1
F,Mar,2015
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