BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
4
5
6
2
1
3
FEATURES
Maximum forward voltage @ 1.0mA of 0.41V
Maximum leakage current @ 50V of 100nA
Reverse voltage rating of 70V
In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
Rail-to-rail ESD protection
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
BAS70TW
Isolated Triple
SOT- 363
Various
Configurations
(See Diagrams
Below)
BAS70ADW
Common Anode
BAS70CDW
Common Cathode
BAS70SDW
Series
6
5
4
6
5
4
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: 70T
Marking Code: 70A
Marking Code: 70C
Marking Code: 70S
MAXIMUM RATINGS (Per Diode)
T
J
= 25°C Unless otherwise noted
Rating
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range8
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol
V
RRM
V
R
I
F
I
FSM
P
tot
T
J
T
stg
Value
70
70
200
0.6
225
-55 to +125
-55 to +125
Units
V
V
mA
A
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
thja
Value
556
Units
°C/W
9/1/2009
Page 1
www.panjit.com
BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode)
Tj = 25°C Unless otherwise noted
Parameter
Breakdown Voltage (Note 1)
Symbol
V
BR
V
F
I
R
C
D
t rr
Conditions
I
BR
= 100 uA
I
F
= 1.0 mA
Forward Voltage (Note 1)
Reverse Leakage Current (Note 1)
Junction Capacitance
Reverse Recovery Time
(See Figure 1)
I
F
= 10 mA
I
F
= 15 mA
Min
70
-
-
-
Typ
-
-
-
-
Max
-
0.41
0.75
1.0
Units
V
V
nA
pF
ns
V
R
= 50 V
0Vdc Bias, f =1 MHz
I
F
= 10mA, I
R
= 10mA
R
L
= 100 Ohms;
measured at I
Rrec
= 1mA
-
-
-
-
1.25
-
100
2.0
5
Note 1: Short duration (<300us) test pulse to minimize self heating
820
Ω
+10 V
2 .0 k
Ω
100 µH
0 .1 µ F
I
F
0 .1 µ F
?
DUT
5 0
Ω
O u tp u t
P u ls e
G e n e ra to r
5 0
Ω
In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (I
F
) to 10mA
2. Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
Page 2
www.panjit.com
BAS70TW/ADW/CDW/SDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
T
J
=125
o
C
100
Forward Current,I
F
(mA)
Reve rse Curre nt,I
R
(
m
A)
10
T
J
=125
o
C
1
0.1
T
J
=75
o
C
10
T
J
=75 C
T
J
=25 C
o
o
1
T
J
=-40
o
C
0.1
0
0.2
0.4
0.6
0.8
1.0
Forward Voltage,V
F
(V)
0.01
0.001
0
20
T
J
=25
o
C
40
60
80
Reverse Voltage,V
R
(V)
Fig.2 Typical Forward Characteristics
Fig.3 Typical Reverse Characteristics
1.4
1.2
Capacitance,C(pF)
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Reverse Voltage,V
R
(V)
Fig.4 Typical Reverse Characteristics
Page 3
www.panjit.com
BAS70TW/ADW/CDW/SDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS70xxx T/R7 - 7" reel, 3K units per reel
BAS70xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2009
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
www.panjit.com
Embedded System
京公网安备 11010802033920号
EEWORLD
