9015
Rev.F Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-92 Plastic Package.
特征
/ Features
P
C
大,h
FE
高而且特性½,与 9014 互补。
High P
C
, excellent h
FE
linearity, complementary pair with 9014.
用途
/
Applications
用于½电平、½噪声的前½放大器。
Low frequency, low noise amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Collector
放大及印章代码
PIN 2：Base
PIN 3：Emitter
/ h
FE
Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
A
60~150
B
100~300
C
200~600
D
400~1000
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9015
Rev.F Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
-50
-45
-5.0
-100
450
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
NF
测试条件
Test Conditions
I
C
=-0.1mA
I
C
=-1.0mA
I
E
=-0.1mA
V
CB
=-50V
V
EB
=-5.0V
V
CE
=-5.0V
I
C
=-100mA
I
C
=-100mA
V
CE
=-5.0V
V
CE
=-5.0V
V
CB
=-10V
f=1.0MHz
V
CE
=-5.0V
R
g
=2.0KΩ
△
f=200Hz
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=-1.0mA
I
B
=-5.0mA
I
B
=-5.0mA
I
C
=-2.0mA
I
C
=-10mA
I
E
=0
I
C
=-0.2mA
f=1.0KHz
100
60
-0.2
-0.82
-0.65
190
4.5
0.7
7.0
10
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-50
-45
-5.0
-0.05
-0.05
1000
-0.7
-1.0
-0.75
V
V
V
MHz
pF
dB
V
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
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