4N60F datasheet, PDF - EEWORLD Datasheet

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4N60F: DescriptionMOSFET; CategoryDiscrete semiconductor; File Size656KB，9 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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4N60F Overview

MOSFET

Features

Product Name: MOSFET

Product model: 4N60F

Product Description:

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

This latest technology has been especially

designed to minimize on-state resistance,

Have a high rugged avalanche

characteristics.These devices are well suited

for high efficiency switched mode power

supplies, active power factor

correction.electronic lamp ballasts based on

half bridge topology.

parameter:

Drain-Source Voltage VDS 600 V

Drain Current-Continuous ID 4A

Drain Current -Pulsed (Note 1) IDM 16 A

Maximum Power Dissipation PD 100W

VGS Gate-to-Source Voltage ± 30 V

EAS Single PulseAvalanche Energy 160 mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Package: TO-220F

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4N60/4N60F

600V N-Channel MOSFET

GENERAL DESCRIPTION

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

DSS

600V

DS(ON)

2.5

This latest technology has been especially

designed to minimize on-state resistance,

Have a high rugged avalanche

characteristics.These devices are well suited

for high efficiency switched mode power

supplies, active power factor

correction.electronic lamp ballasts based on

half bridge topology.

Features

• 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

• Low gate charge ( typical 16nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

4N60/4N60F

TO-220/220F

0GFD

PART NUMBER

PACKAGE

BRAND

Ordering Information

www.goford.cn

TEL：0755-86350980 FAX：0755-86350963

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