3VD379600YL
3VD379600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD379600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology;
Ø
Ø
Ø
Ø
Ø
Advanced termination scheme to provide enhanced
voltage-blocking capability;
Avalanche Energy Specified;
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
The chips may packaged in TO-220 type;
The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers;
Ø
Ø
Die size: 3.8mm*2.8mm;
Chip Thickness: 300±20µm;
Top metal : Al, Backside Metal : Ag.
3
1
PAD1:GATE
PAD3:SOURCE
Ø
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
T
J
Tstg
-55
Ratings
600
±30
4
106
150
+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
B
VDSS
V
TH
I
DSS
R
DS(on)
I
GSS
V
FSD
Test conditions
V
GS
=0V, I
D
=250µA
V
GS
= V
DS
, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=10V, I
D
=2A
V
GS
=±30V, V
DS
=0V
I
S
=4A, V
GS
=0V
Min
600
2
-
-
-
-
Typ
-
-
-
-
-
-
Max
-
4
1
2.1
±100
1.4
Unit
V
V
µA
Ω
nA
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.06.06
Page 1 of 1
Power technology
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