2SC2881O datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC2881O

2SC2881O: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size121KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

2SC2881O Overview

Transistor

2SC2881O Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.8 A
Configuration	Single
Minimum DC current gain (hFE)	80
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
surface mount	YES
Base Number Matches	1

2SC2881O Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC2881

TRANSISTOR (NPN)

1. BASE

FEATURES

Small Flat Package

High Transition Frequency

High Voltage

Complementary to 2SA1201

APPLICATIONS

Power Amplifier and Voltage Amplifier

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

120

800

500

250

150

-55~+150

2. COLLECTOR

3. EMITTER

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

Test

conditions

Min

120

0.1

240

120

MHz

Typ

Max

Unit

µA

=1mA,I

=10mA,I

=1mA,I

=120V,I

=5V,I

=5V, I

=100mA

=500mA,I

=50mA

=5V, I

=0.5A

=5V,I

=100mA

=10V, I

=0, f=1MHz

CLASSIFICATION OF h

RANK

RANGE

MARKING

80–160

CO1

120–240

CY1

A,Nov,2010

Recommended Resources

Tongzhou CDVB3188V receiver switching power supply circuit

VTR control command discrimination circuit diagram

Unlatched photoelectric smoke detector circuit diagram

TA-25 servo accelerometer circuit for inclinometer

Power polarity tester

Computer motherboard circuit diagram 815 4_28

The "Soul" of the Microcontroller - The Use of Data Memory: We can say that the program memory stores the soul of the microcontroller, which is the working program. The smallest one may be only 1KB (it can only hold 1024 8-bit data at most, because there are m...; fish001 Microcontroller MCU

Detailed Explanation of I2C Bus Protocol: I2C bus physical topologyThe I2C bus is very simple in terms of physical connection, and consists of SDA (serial data line) and SCL (serial clock line) and pull-up resistors. The communication princip...; 可乐zzZ stm32/stm8

What is the difference between package 0603 and R0603 (or 0603R)?: What is the difference between package 0603 and R0603 (or 0603R)?...; 一沙一世 stm32/stm8

[Sipeed LicheeRV 86 Panel Review] 2. Data Links: [i=s]This post was last edited by sonicfirr on 2022-3-8 11:30[/i]1. Data acquisitionAfter studying other bloggers' articles and my own practice, I learned that there are many links to 86 Panel's mater...; sonicfirr Domestic Chip Exchange

[Yatli AT32F421 Review] Doubts from EXTI disconnection: Last time, I used the interrupt method to read the key code to improve efficiency, but there was also a small problem. After CH450 scans the key, it will pull down a low-level pulse on the INT pin. My...; eew_Violet Domestic Chip Exchange

TI DSP CAN online program upgrade question: 2803x and 2806x use CAN communication for online program upgrade. The idea is that the program is divided into boot program and main program. The boot program jumps to the main program. Both programs ...; 喜鹊王子 TI Technology Forum

Popular Components