2SC1959 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> 2SC1959

Preview

2SC1959: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size111KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet View All

2SC1959 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: 2SC1959

Product parameters:

Pcm (maximum dissipated power): 500mW

Ic (collector current): 500mA

BVcbo (collector-base breakdown voltage): 35V

BVceo (Collector-Emitter Breakdown Voltage): 30V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 70, Max: 400

VCE (sat) saturation voltage drop: 0.25V

fT (transition frequency): 300+MHz

Package: TO-92S

2SC1959 Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

TO – 92S

2SC1959

TRANSISTOR (NPN)

1. EMITTER

FEATURES

Excellent h

Linearity

High Transition Frequency

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

0.5

500

250

150

-55~+150

2. COLLECTOR

3. BASE

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

CE(sat)

Test

conditions

Min

0.1

0.25

300

MHz

400

Typ

Max

Unit

μA

= 0.1mA,I

=1mA,I

=0.1mA,I

=35V,I

=5V,I

=1V, I

=100mA

=6V, I

=400mA

=100mA,I

=10mA

=1V, I

=100mA

=6V,I

=0, f=1MHz

=6V,I

=20mA

CLASSIFICATION OF h

RANK

RANGE

120-240

40Min

200-400

FE(1)

FE(2)

70-140

25Min

A,Dec,2010

Recommended Resources

Galanz WP700 mechanical microwave oven circuit diagram

Refrigerator protector circuit manufactured using four operational amplifiers LM324

Highly reliable electronic code lock circuit

astable circuit

Active dual secondary bandpass filter circuit

Five-bridge series bridge high-voltage rectifier circuit

STM32 Network SMI Interface: 1Introduction to Ethernet The Ethernet peripheral of STM32F20X and STM32F21 can receive and send data according to the IEEE802.3-2002 standard.Ethernet provides a complete and flexible peripheral to m...; 嵌入式enjoy stm32/stm8

CC3200-LAUNCHXL Development Board: The development board has complete documentation and is easy to use. I used IAR7.2.0 + cc3200sdk-1.3.0-windows-installer.exe + CC3x00ServicePack-1.0.1.13-2.11.0.1-windows-installer.exe to build the pl...; Jacktang Wireless Connectivity

Common indicators and important characteristics of operational amplifiers: Input offset voltage (Offset Voltage, VOS) Definition: When the op amp is used in open loop, the DC voltage loaded between the two input terminals makes the amplifier DC output voltage be 0. Good or b...; Jacktang Analogue and Mixed Signal

How about my ADS1220 circuit?: This is the first time I use a 24-bit AD ADS1220. I refer to the circuit on the Internet and the schematic diagram is as follows. Can you guys see if there are any problems? Thank you!...; chenbingjy stm32/stm8

Qinheng CH579M-R1 development board free evaluation activity is coming soon, tell us what you think of this board~: Qinheng CH579M-R1 development boardThis evaluation board is used for testing and development of CH579 chip. It is equipped with host computer ISP tool, supports two ISP download modes, USB and serial ...; okhxyyo Domestic Chip Exchange

MPS Bonus Sharing | Which problem gives you the most headaches in inductor applications?: The second stop of the MPS Inductor Discovery Season: Discover Small and Extraordinary Secrets! is now open. Welcome to the MPS Forum Inductor Section to share which problem in inductor application is...; EEWORLD社区 Power technology

Popular Components