2SB946 datasheet, PDF - EEWORLD Datasheet

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2SB946: DescriptionPNP transistor; CategoryDiscrete semiconductor; File Size141KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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2SB946 Overview

PNP transistor

Features

Product Name: PNP Transistor

Product model: 2SB946

Product parameters:

Pcm (maximum dissipated power): 2000mW

Ic (collector current): -7000mA

BVcbo (Collector-Base Breakdown Voltage): -130V

BVceo (Collector-Emitter Breakdown Voltage): -80V

BVebo (emitter-base breakdown voltage): -7V

hFE (current gain): Min: 60, Max: 260

VCE (sat) saturation voltage drop: -0.5V

fT (transition frequency): 30+MHz

Package: TO-220F

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO-220F

2SB946

TRANSISTOR (PNP)

1.BASE

FEATURES

Low Collector to Emitter Saturation Voltage V

CE(sat)

Satisfactory Linearity of Forward Current Transfer Ratio h

Large Collector Current I

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-130

-80

-7

62.5

150

-55~+150

2.COLLECTOR

3.EMITTER

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

CE(sat)

BE (sat)

Test

conditions

Min

-130

-80

-7

-10

-50

260

-0.5

-1.5

MHz

Typ

Max

Unit

=-100uA,I

=-10mA,I

=-100uA,I

=-100V,I

=-5V,I

=-2V, I

=-0.1A

=-2V, I

=-3A

=-5A,I

=-250mA

=-5A,I

=-250mA

=-10V,I

=-0.5A，f=10MHz

CLASSIFICATION OF h

FE(2)

RANK

RANGE

60-120

90-180

130-260

A,Feb,2012

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