2SB1114 datasheet, PDF - EEWORLD Datasheet

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2SB1114: CategoryDiscrete semiconductor triode; File Size810KB，3 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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2SB1114

PNP-Silicon

General use Transistors

、1.5A、25V

Applications

：Can

be used for switching and amplifying in various

electrical and electronic circuit.

Maximum ratings

Parameters

Collector-emitter voltage (I

=0)

Collector-base voltage（I

=0）

Emitter-base voltage（I

=0）

Collector current

Total

power(T

=25℃)

Junction temperature

Storage temperature

dissipation

Symbol

CEO

CBO

EBO

tot

stg

Rating

1.5

150

-55½150

Unit

℃

SOT-89

1 Base 2/4 Collector 3 Emitter

* Device is mounted on a printed circuit board.

Electrical characteristics（Unless otherwise specified，T

=25℃）

Parameters

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Forward current

transfer ratio

CBO

（

sat

）

=35V，I

=800mA，

=80mA

=50mA，

=10V，

f=100MHz

=1V；I

=100mA

200

—

200

400

100

0.5

—

MHz

Symbol

(BR)CEO

(BR)CBO

(BR)EBO

Test condition

=2mA，I

=100µA，I

Min.

135

Max.

—

270

Unit

—

Collector-base current

Collector-emitter saturation voltage

Characteristic frequency

REV.08

1 of 3

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