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2SB083040MLYY

Description
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerSilan
Websitehttp://www.silanic.com.cn/
Environmental Compliance
Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.
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2SB083040MLYY Overview

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),

2SB083040MLYY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSilan
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY

2SB083040MLYY Preview

2SB083040ML
2SB083040ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
Ø
Ø
Ø
Ø
Ø
2SB083040ML is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Low power losses, high efficiency;
High ESD capability;
High surge capability;
Guard ring construction for transient protection;
Packaged products are widely used in switching power
suppliers, polarity protection circuits and other electronic
circuits.
Chip Topography
ORDERING SPECIFICATIONS
Product Name
2SB083040MLYY
Specification
Top metal is Ag, for solder process;
Back metal is Ag, for solder process.
CHIP INFORMATION
Item
Wafer Size
Gross Die
Die Size(La)
Top Pad Size(Lb)
Wafer Thickness(Lc)
Top Metal / Thickness
Back Metal / Thickness
Passivation
Scribe Line Sign
Scribe Line Width
Characterization
5Inch
15,840dice/wafer
830µm
730µm
280±20µm
Ag:5µm
Ag:1.2µm
SiO2
12µm
50µm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0
2010.03.18
Page 1 of 2
2SB083040ML
ABSOLUTE MAXIMUM RATINGS
(at
DO-41 package
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
40
1
25
125
-40~125
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F
I
R
I
F
=1A
V
R
=40V
Test Conditions
I
R
=100µA
Min.
40
--
--
Max.
--
0.53
50
Unit
V
V
µA
Disclaimer :
Silan reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify
that such information is complete and current.
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products
in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety
standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products
could cause loss of body injury or damage to property.
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0
2010.03.18
Page 2 of 2
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