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2SA812M7(SOT-23-3L)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

2SA812M7(SOT-23-3L) Overview

Transistor

2SA812M7(SOT-23-3L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)300
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Nominal transition frequency (fT)180 MHz
Base Number Matches1

2SA812M7(SOT-23-3L) Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SA812
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23-3L
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
Collector current
A
I
CM
: -0.1
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
unless otherwise specified)
Test
conditions
MIN
-60
-50
-5
-0.1
-0.1
90
600
-0.3
-0.68
180
V
V
MHz
TYP
MAX
UNIT
V
V
V
Ic=-100
µ
A, I
E
=0
Ic= -1mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
=- 60 V , I
E
=0
V
EB
= -5V ,
I
C
=0
0. 35
2. 92¡ À0. 05
1. 9
µ
A
µ
A
V
CE
=- 6V, I
C
= -1mA
I
C
=-100 mA, I
B
= -10mA
I
C
=-1mA, V
CE
=-6V
V
CE
=-6V, I
C
= -10mA
f
T
CLASSIFICATION OF h
FE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
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