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2N7002KW_14

Description
60V N-Channel Enhancement Mode MOSFET - ESD Protected
File Size147KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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60V N-Channel Enhancement Mode MOSFET - ESD Protected

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2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
0.087(2.20)
0.078(2.00)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
SOT-323
Unit
inch(mm)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.087(2.20)
0.070(1.80)
0.006(0.15)
0.002(0.05)
MECHANICALDATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
0.016(0.40)
0.008(0.20)
0.004(0.10)MAX.
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
,T
S TG
R
θJ
A
Li mi t
60
+20
11 5
800
200
120
- 5 5 to + 1 5 0
625
Uni ts
V
V
mA
mA
mW
O
M a xi m um P o we r D i s s i p a ti o n
Op e r a ti ng J unc ti o n a nd S to r a g e
Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal
Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
PAGE . 1
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