Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.
Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube
Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)
Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.
switching diode
Features
Product Name: Switching Diode
Product model: 1SS184
product features:
Low forward voltage
Fast reverse recovery time
Product parameters:
Pd dissipated power: 150mW
Io rectified current: 100mA
VR reverse working voltage: 80V
VF forward buck: 1.2V
IR reverse current: 0.5uA
Trr Forward recovery time: 4ns
Package: SOT-23
Parameter Name | Attribute value |
Maker | JCET |
package instruction | R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Configuration | COMMON CATHODE, 2 ELEMENTS |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.2 V |
JESD-30 code | R-PDSO-G3 |
Number of components | 2 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Maximum output current | 0.05 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Maximum power dissipation | 0.15 W |
Maximum repetitive peak reverse voltage | 80 V |
Maximum reverse recovery time | 0.004 µs |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
Base Number Matches | 1 |
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