EEWORLDEEWORLDEEWORLD

Part Number

Search

1SMB5921-AU_LU_00001

Description
SURFACE MOUNT SILICON ZENER DIODE
File Size138KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet View All

1SMB5921-AU_LU_00001 Overview

SURFACE MOUNT SILICON ZENER DIODE

1SMB5921-AU_LU_00001 Preview

Download Datasheet
1SMB5921-AU~1SMB5942-AU
SURFACE MOUNT SILICON ZENER DIODE
VOLTAGE
FEATURES
• Low profile package
• Built-in strain relief
• Low inductance
• Typical I
R
less than 1.0µA above 12V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives
0.096(2.44)
0.083(2.13)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
6.8 to 51 Volts
POWER
1.5 Watts
• For surface mounted applications in order to optimize board space.
• Glass passivated junction
• High temperature soldering : 260°C /10 seconds at terminals
MECHANICAL DATA
• Case: JEDEC DO-214AA,Molded plastic over passivated junction.
• Terminals: Solder plated,solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Standard Packaging:12mm tape (EIA-481)
• Weight: 0.0032 ounce, 0.092 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak Pulse Power Dissipation on T
L
=75
O
C (Note A) Derate above 75
O
Symbol
C
Value
1.5
10
-55 to +150
Units
Watts
Amps
O
P
D
I
F S M
T
J
, T
S T G
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)
Operating Junction and StorageTemperature Range
C
NOTES:
A.Mounted on 5.0mm2 (.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum.
STAD-FEB.10.2009
1
PAGE . 1
TMS320C6748 DSP Development Kit (LCDK)
The TMS320C6748 DSP The DSP central processing unit (CPU) contains eight functional units, two register files, and two data paths as shown in Figure 3-2. The two general register files (A and B) each ...
fish001 DSP and ARM Processors
[RVB2601 Creative Application Development] 6. Online Weather Clock Draft Version
1. Description Basic functions of Internet weather clock: 1. RTC real-time clock display and automatic time synchronization upon power on 2. Real-time weather information display 3. Future weather for...
xinmeng_wit XuanTie RISC-V Activity Zone
Altium Designer single-select and checkbox disproportion
Altium Designer single-select and checkbox disproportionThe right side of the dialog box is also missing, no matter how long it is stretchedI suspect it's related to WIN10 or the high-resolution scree...
littleshrimp PCB Design
Help: Transformer detection of low frequency or DC residual current
The following is a sampling circuit of a residual current detector for an IT power distribution system. It was copied from someone else's board. The circuit and device parameters in Figure 2 have been...
viseng Analog electronics
[Silicon Labs BG22-EK4108A Bluetooth Development Review] Part 3: Bluetooth-Soc Blinky Example Development Experience
[i=s]This post was last edited by jj1989 on 2022-1-23 22:51[/i]【Silicon Labs BG22-EK4108A Bluetooth Development Review】Part 3: Official Bluetooth-Soc Blinky Example Development Experience Preface Last...
jj1989 Development Kits Review Area
Analysis of the effect of resistance between the be electrodes of PNP transistors
As shown in the figure below, if there is no resistor R3, then when the voltage at point A (i.e. Vin) is greater than (VT1+Vbe), the PNP will be turned on. If resistor R3 is added now, the voltage on ...
shaorc Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号