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1N5393GSD1

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size473KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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1N5393GSD1 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N5393GSD1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current2.5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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1N5391GS THRU 1N5399GS
General Purpose Rectifier
Features
● High efficiency
● High current capability
● High reliability
● High surge current capability
● Low power loss
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
RoHS
COMPLIANT
Mechanical Data
Package:
DO-204AL(DO-41)
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant
Terminals:
Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:
Color band denotes cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT
1N5391G
S
1N5391G
S
V
RRM
I
F(AV)
V
A
50
1N5392G
S
1N5392G
S
100
1N5393G
S
1N5393G
S
200
1N5395G
S
1N5395G
S
400
1.5
1N5397G
S
1N5397G
S
600
1N5398G
S
1N5398G
S
800
1N5399G
S
1N5399G
S
1000
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =75℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
I
FSM
Tstg
Tj
A
50
-55 ~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
UNIT
TEST CONDITIONS
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G
S
S
S
S
S
S
S
1.1
2.5
50
V
FM
I
RRM1
V
I
FM
=1.5A
Ta=25℃
μA
I
RRM2
Ta=100℃
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
Typical junction capacitance
Cj
pF
15
Thermal Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Thermal Resistance(Typical)
SYMBOL
R
θJ-A
UNIT
℃/W
1N5391GS
1N5392GS
1N5393GS
1N5395GS
55
1N5397GS
1N5398GS
1N5399GS
1/4
S-A493
Rev.2.1, 02-Feb-16
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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