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1N5235B

Description
Zener diode
CategoryDiscrete semiconductor    diode   
File Size182KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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1N5235B Overview

Zener diode

Features

Product Name: Zener diode


Product model: 1N5235B


product features:


Ptot 500mW


Vz 2.4V-75V



Product Usage:


Stabilizing Voltage



product data:


Zener voltage range Vz at Izt Rated Zener voltage: 6.8V


Test current Izt Test current: 20mA


Dynamic resistance Maximum dynamic resistance:


Zzt at Izt: 5Ω


Zzk at Izk =0.25mA :750Ω


Temperature of Coefficient at Izt Temperature coefficient: 0.050%/K


Reverse leakage current Maximum reverse leakage current: IR: 3μA VR=5V


Maximum junction temperature Tj: 175℃


Storage temperature range Tstg: -65~+175℃



Package: DO-35


1N5235B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance5 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage6.8 V
surface mountNO
Working test current20 mA

1N5235B Preview

Download Datasheet
1N52 SERIES
稳压(½纳)二极管
Zener Diodes
■特征
Features
P
tot
500mW
V
z
2.4V-75V
1.02(26.0)
MIN
■外½尺寸和印记
Outline Dimensions and Mark
DO-35
.165(4.20)
MAX
1.02(26.0)
MIN
.022(0.55)
MAX
■用途  Applications
 
●稳定电压用  Stabilizing
Voltage
.079(2.00)
MAX
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
 
Limiting Values (Absolute Maximum Rating)
参数名称
Item
损耗功率
Power dissipation
½纳电流
Zener current
最大结温
Maximum junction temperature
存储温度范围
Storage temperature range
符号
Symbol
P
tot
I
Z
T
j
单½
Unit
mW
mA
条件
Conditions
T
L
=25℃
最大值
Max
500
P
tot
/V
Z
175
T
stg
-65 to +175
■电特性 (T
a=25
除非另有规定)
Electrical Characteristics(Ta=25
Unless otherwise specified)
参数名称
Item
典型热阻(1)
Thermal resistance
正向电压
Forward voltage
符号
Symbol
R
θJA
V
F
单½
Unit
℃/W
V
条件
Conditions
结到环境,L=4毫米,T
L
=常温
junction to ambient air, L=4mm,T
L
=constant
I
F
=200mA
最大值
Max
300
1.1
Document Number 0243
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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