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1N4942

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size59KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP

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1N4942~1N4948
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE
FEATURES
• High current capability.
1.0(25.4)MIN.
200 to 1000 Volts
CURRENT
1.0 Amperes
DO-41
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Fast Recovery for high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
.034(.86)
.028(.71)
MECHANICALDATA
• Case: Molded plastic, DO-41
• Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.0118 ounce, 0.336 gram
.205(5.2)
.160(4.1)
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L 1 N 4 9 4 2 1 N 4 9 4 4 1 N 4 9 4 6 1 N 4 9 4 7 1 N 4 9 4 8
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J A
T
J
, T
S T G
150
12
41
-5 5 to +1 5 0
200
140
200
400
280
400
600
420
600
1 .0
30
1 .3
5 .0
500
250
500
800
560
800
1000
700
1000
U N IT S
V
V
V
A
A
V
µ
A
ns
pF
O
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
STAD-MAR.03.2009
1
PAGE . 1
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