1N4935 datasheet, PDF - EEWORLD Datasheet

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1N4935: Description1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS; CategoryDiscrete semiconductor diode; File Size718KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N4935 Overview

1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS

Features

Product Name: 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS

Product model: 1N4935

product features:

Low forward voltage drop

High current capability

High reliability

High surge current capability

Mechanical data:

Cases:Molded plastic

Epoxy:UL 94V-0 rate flame retardant

Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed

Polarity:Color band denotes cathode end

High temperature soldering guaranteed;

250?C /10 seconds/.375”,(9.5mm)lead

Lengths at 5 lbs.,(2.3kg) tension

Weight: 0.34 grams

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 200V

Maximum RMS Voltage VRMS Voltage effective value: 140V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 200V

Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=75℃ IF(AV) Maximum forward current: 1.0A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 30 A

Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.2 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA

DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 100μA

Maximun Reverse Recovery Time TRR ：200nS

Typical Thermal Resistance (Note) RθJA thermal resistance coefficient: 55 ℃/W; RθJL thermal resistance coefficient: 25 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -50 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -50 to +150 ℃

Package: DO-41

1N4935 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
Maximum non-repetitive peak forward current	30 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Base Number Matches	1

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