150N06Y datasheet, PDF - EEWORLD Datasheet

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150N06Y: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 150A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta=25°C): 156W(Tc) Type: N channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size484KB，7 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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150N06Y Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 150A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta=25°C): 156W(Tc) Type: N channel

150N06Y Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	150A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	6mΩ @ 30A,10V
Maximum power dissipation (Ta=25°C)	156W(Tc)
type	N channel

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150N06Y

150 Amps,60 Volts N-CHANNEL MOSFET

FEATURE



150A,60V,R

DS(ON)MAX

=6mΩ@V

=10V/30A

Low gate charge

Low C

iss

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-247

Absolute Maximum Ratings

=25℃,unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current(Note1)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current(Note1)

Reverse Diode dV/dt (Note 3)

Operating Junction and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

Mounting Torque

6-32 or M3 screw

Symbol

DSS

GSS

dv/dt

STG

150N06Y

±30

150

450

5.5

-55 to +150

260

1.1

UNIT

V/ns

℃

lbf·in

N·m

Thermal

Parameter

Characteristics

Symbol

th(J-c)

=25℃

TO-247

0.8

156

Units

℃/W

Thermal resistance , Junction to Case

Maximum Power Dissipation

Version1.0-2015.2

www.perfectway.cn

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