1.5SMCJ14AT/R13 datasheet, PDF

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1.5SMCJ14AT/R13: DescriptionTrans Voltage Suppressor Diode, 1500W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size162KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1.5SMCJ14AT/R13 Overview

Trans Voltage Suppressor Diode, 1500W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

1.5SMCJ14AT/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DO-214AB
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compli
Other features	UL RECOGNIZED
Maximum breakdown voltage	17.9 V
Minimum breakdown voltage	15.6 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	14 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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1.5SMCJ SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts

STAND-OFF VOLTAGE

5.0 to 220 Volts

Recongnized File # E210467

FEATURES

0.245(6.22)

0.280(7.11)

0.260(6.60)

0.012(0.305)

0.006(0.152)

0.103(2.62)

0.079(2.00)

0.008(0.203)

0.002(0.051)

0.128(3.25)

• For surface mounted applications in order to optimize board space.

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: JEDEC DO-214AB,Molded plastic over passivated junction.

• Terminals: Solder plated,solderable per MIL-STD-750, Method 2026

• Polarity: Color band denotes positive end (cathode)

• Standard Packaging:16mm tape (EIA-481)

• Weight: 0.007 ounce, 0.021 gram

0.050(1.27)

0.030(0.76)

0.320(8.13)

0.305(7.75)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 1.5SMCJ5.0 thru types 1.5SMCJ220.

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

For Capacitive load derate current by 20%.

Rating

Peak Power Dissipation at T

=25

C, T

=1ms(Note 1)

Typical Thermal Resistance Junction to Air (Note 2)

Peak Forward Surge Current, 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JECED Method) (Note 3)

Operating Junction and Storage Temperature Range

Symbol

P K

FSM

S T G

0.108(2.75)

Value

1500

200

-55 to +150

0.220(5.59)

Units

Watts

C/W

Amps

NOTES:

1.Non-repetitive current pulse, per Fig. 3 and derated above T

=25°Cper

Fig. 2.

2.Mounted on 2.0mm

( .013mm thick) land areas.

3.Measured on 8.3ms , single half sine-wave or equivalent square wave , duty cycle= 4 pulses per minutes maximum.

STAD-APR.03.2009

PAGE . 1

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