IR introduces three new 25V DirectFET MOSFETs

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IR introduces three new 25V DirectFET MOSFETs [Copy link]

International Rectifier (IR) recently launched three new 25V DirectFET MOSFETs, including the IRF6622 control MOSFET, IRF6628 and IRF6629 synchronous MOSFETs, which are mainly used in embedded CPU power supplies, VRM modules, and embedded DC-DC converters in servers and telecommunications systems. These applications require higher efficiency and better thermal conductivity to increase power density.

Yan Guofu, IR China Sales Director, pointed out: "Compared with 20V devices, the new 25V DirectFET devices can provide more sufficient voltage margin and better meet the needs of 12V applications. And compared with 30V devices with the same active silicon area, 25V devices can reduce power consumption." The gate charge of

the IRF6622 control MOSFET is very low (Qg = 12nC), which helps reduce switching losses. The optimized IRF6628 and IRF6629 synchronous MOSFETs not only have low conduction losses, but also have low on-resistance RDS(on), which are only 1.9mOhms and 1.6mOhms respectively. The IRF6622 is available in a small can DirectFET package with an SQ footprint, while the IRF6628 and IRF6629 are available in a medium can DirectFET package with an MX footprint.

The new 25V DirectFET is designed for 20A to 30A per phase. In a 5-phase design with 12VIN, 1.3VOUT, 300kHz, 1 pair of IRF6622 and IRF6628 per phase, combined with the IR XPhase chipset, can achieve 88% efficiency at 130A. Under the same conditions, the combination of IRF6622 and IRF6629 is even more efficient, reaching 88.5% at 130A. Detailed information on the new devices can be found at www.irf.com and www.irf.com.cn.