2 micron Bicmos standard process and 2000 gates

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2 micron Bicmos standard process and 2000 gates

Project Name 2 micron Bicmos standard process and 2000 gates

Industry Emerging Technologies

Research and Development Unit Shanghai Institute of Metallurgy, Chinese Academy of Sciences

Location Shanghai

Main contributor Zhang Min, Yu Bo, Wang Meiyuan, Hu Xuhong, Wang Jianfeng, Qiu Bin, Chen Mingqi, Feng Genbao

Achievement level Leading in China

Identification time 19951201

Achievements I. Brief introduction to the content of the achievement, key technologies, and technical and economic indicators This achievement has established a set of advanced BICMOS manufacturing technology that integrates CMOS devices and bipolar devices on the same chip, with the characteristics of double buried layers, 2.5 micron intrinsic epitaxial layers, double wells, polysilicon emitter regions, deep collector regions, and flat double-layer metal wiring. The entire process of BiCMOS manufacturing technology requires 17 mask plates, 18 photolithography, 11 ion implantation, 9 high-temperature oxidation diffusion, 1 epitaxial growth, 5 chemical vapor deposition, and 2 physical sputtering deposition. BiCMOS circuits have the advantages of high integration and low power consumption of CMOS and high speed and strong driving capabilities of bipolar, but the process complexity is increased. This manufacturing technology can be extended to 1.5 micron BiCMOS. At the same time, this achievement has established a 2.0 micron BiCMOS standard manufacturing technology and design environment, providing 500-gate and 2000-gate gate array substrates and macro cell libraries. It has laid a good foundation for the short-term development of high-performance BiCMOS circuits. The main achievements and key technologies are as follows: 1. Establishment of 2.0 micron double-layer metal wiring and double-well double-buried layer BiCMOS standard manufacturing technology; (1) 2.5 micron intrinsic epitaxial layer two-step epitaxial growth process; (3) Polysilicon emitter process; (4) Concentrated base contact process; (5) Deep collector process; 2. Establishment of BiCMOS design rules and macro cell library; 3. 500-gate gate array circuit. The 500-gate gate array circuit has a total of 42 signal input/output leads, 6 power supplies and grounding, including inverters, NAND gates, NOR gates, I/O inputs, I/O outputs and other circuit forms, with a chip area of 5mmX5mm. 4. 2000-gate gate array circuit. The 2000-gate gate array circuit has a total of 72 signal input/output leads, 8 power supplies and grounding, including dividers, memories, I/O inputs, I/O outputs and other circuit forms, with a chip area of 5.5mmX6.8mm. 2. Economic, social and environmental benefits and prospects for promotion and application: Bicmos circuits have the advantages of high integration, low power consumption, high speed and strong driving capability, and have unique application value in high-integration, high-speed integrated circuits. Abroad, high-performance BiCMOS has been widely used in CPU, interface memory, high-speed data exchange, image processing, I/O processing, etc. with its strong driving capability, low power consumption and I/O compatibility. Therefore, it is urgent and necessary to develop my country's Bicmos manufacturing technology. The BICMOS standard process and design environment established by this achievement have laid a foundation for the development of high-performance Bicmos products, and closely followed the development pace of international integrated circuits. The BICMOS process and its circuit performance are equivalent to the international 1 micron Bicmos manufacturing technology in the late 1980s. If the process is adjusted appropriately, it can be developed into 1.2-1.5 micron Bicmos manufacturing technology. 3. Feasibility of achievement transformation The 2.0 micron Bicmos technology and the corresponding forward design environment established by this achievement lay a good foundation for the development of Bicmos circuits or the provision of Bicmos chip processing markets. This achievement can also be applied to circuits with high integration and strong driving capability, such as memory, gate array, microprocessor and other products. Digital-analog hybrid BICMOS circuits and high-voltage BICMOS circuits have even better application prospects.