Qorvo Releases High-Power 5.4mΩ 750V SiC FETs in TOLL Package

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Qorvo Releases High-Power 5.4mΩ 750V SiC FETs in TOLL Package [Copy link]

Qorvo, a leading global provider of connectivity and power solutions, will demonstrate a new surface mount TO-No Lead (TOLL) packaging technology for its high-performance 5.4 (mΩ) 750V SiC FETs. This is the first in a family of 750V SiC FETs released in TOLL packaging with on-resistance ranging from 5.4 mΩ to 60 mΩ. These devices are ideal for space-constrained applications such as AC/DC power supplies from a few hundred watts to tens of millions of watts and solid-state relays and circuit breakers up to 100A.

In the 600/750V power FETs category, Qorvo Gen 4 SiC FETs are unmatched in the key qualities of on-resistance and output capacitance. In addition, in a TOLL package, these devices have an on-resistance of 5.4 mΩ, which is 4-10 times lower than the best Si MOSFETs, SiC MOSFETs and GaN transistors in the market today. The 750V rating of SiC FETs is also 100-150 volts higher than some other alternative technologies, providing significantly enhanced design margin for managing voltage transients.

“The introduction of our 5.4 mΩ Gen4 SiC FET in a TOLL package is an important step in providing the industry with the best performing devices and a wide range of device choices,” said Anup Bhalla, principal engineer for Qorvo’s Power Devices business unit. “Our customers, especially those working in industrial applications, need this combination of flexibility and improved cost-effectiveness in their power design.”

The TOLL package is 30% smaller than a D2PAK surface mount device and is 2.3mm tall, half the size of its predecessor. Despite the reduced size, advanced manufacturing techniques enable an industry-leading 0.1°C/W thermal resistance from junction to case. The DC current rating is 120A up to 144°C and the pulse current rating is 588A up to 0.5 milliseconds. The combination of extremely low on-resistance and excellent transient thermal behavior results in an 'I2t' rating that is 8 times better than Si MOSFETs in the same package, which will help improve robustness and immunity while also simplifying design. The TOLL package also offers a Kevin source connection for reliable high-speed switching.

These fourth-generation SiC FETs leverage Qorvo's unique series circuit structure to co-package a SiC JFET with a Si MOSFET, delivering the full efficiency of wide-bandgap switching technology and the simplified gate-level drive of a SiC MOSFET.

TOLL packaged Gen4 5.4 mΩ SiC FETs can now be calculated using Qorvo's free online tool, which instantly evaluates efficiency, component losses and junction temperature rise for various AC/DC and isolated/non-isolated DC/DC converter topologies. Single and parallel devices can be compared under user-specified thermal conditions to obtain the best solution.

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