【PI Live FAQ】Silicon Carbide (SiC) and Gallium Nitride (GaN) ICs for Auxiliary Power Supplies in the Industrial Market

EEWORLD社区

【PI Live FAQ】Silicon Carbide (SiC) and Gallium Nitride (GaN) ICs for Auxiliary Power Supplies in the Industrial Market [Copy link]

Live Topic : Silicon Carbide (SiC) and Gallium Nitride (GaN) ICs for Auxiliary Power Supplies in the Industrial Market

Content Introduction
The InnoSwitch3-EP flyback switcher IC perfectly integrates Power Integrations' FluxLink safety isolation communication technology to enable small, compact, low-component power IC design. Now, the InnoSwitch3-EP product family has been expanded to include silicon, PowiGaN and SiC switch technology solutions, supporting a variety of high-efficiency power supply designs in commercial, industrial and automotive applications.

With a 1700V withstand voltage, the InnoSwitch3-EP IC is ideal for very high input voltage applications such as building air conditioning, as well as auxiliary power supplies in 800V battery quick-swap devices. SiC switches are also the performance foundation of the automotive-grade InnoSwitch3-AQ IC product family, which supports 800VDC electric vehicle applications.

The 900V rated InnoSwitch3-EP devices are available in silicon and GaN switch options. The newly released PowiGaN-based devices expand the available output power of the 900V InnoSwitch3-EP product family from 30W to 100W, while increasing efficiency to over 93%. The increased efficiency eliminates the need for heat sinks in most designs.

With the new 900V PowiGaN switches, designers can now create powerful, compact industrial power designs with higher voltage margins and improved mechanical reliability. This technology is also used in the InnoSwitch3-AQ IC product family, making it ideal for 400VDC electric vehicle systems.

All InnoSwitch3 devices feature FluxLink technology, which eliminates the need for optocouplers and associated discrete feedback components. This further improves reliability and reduces component count while ensuring precise output current and voltage control and extremely fast dynamic response.

Live lecturer : Zoro Li | Senior Field Application Engineer at PI

FAQ details1
. Maximum temperature limit of PN junction? A: 150 degreesA
: 150 degrees2
. "All InnoSwitch3 devices use FluxLink technology." Can you give a detailed introduction to the advantages of Fluxlink technology and the design considerations for design use?
A: Fluxlink not only plays an isolation role, but also has high reliability, and makes the dynamic response of the power supply extremely good3
. What is the difference between GaN and SiC, and how to choose which one to use in the auxiliary power supply solution?
A: Gan has a lower Rdson, but Sic has a higher withstand voltage. PI's Sic withstand voltage can be as high as 1700V4. How high can
the maximum frequency run?
A: Inno3: 132KHZ, Inno4: 155KHZ5 . What is the maximum achievable output power? A: InnoSwtich3 can output a maximum of 100W, while InnoSwitch4 can reach a maximum output of 200W6 . What is the dynamic switch or on-resistance performance of GaN under high voltage? A: PI's Gan has high reliability. When the input voltage changes suddenly, Rdson remains stable and has almost no effect on efficiency. 7. Generally, when the load is above 50%, how much efficiency can be achieved? A: PI's InnoSwitch series can achieve ultra-high efficiency in the entire range. For example, the efficiency of 20/3.25A output at 230Vac full load is as high as 94.7%, and the efficiency can still reach 94.4% at 50% load. 8. Is there an integrated switch MOS tube in this solution? A: PI's Inno series has MOS with integrated 650V, 725V, and 900V Rdson. Of course, there are also integrated Gan and SiC. 9. Does PI have transformer design software? A: There is an Expert design tool on PI's official website, which can be used to design and calculate transformer parameters online. 10. What are the special features of SiC and Gan in EMC design? A: PI integrates Gan and Sic with drivers and controllers. EMC has been optimized and used in the same way as MOS devices. No special attention is required. 11. Is a heat sink required? A: No 12. How to make industrial power supply have higher voltage margin? A: Use devices with higher voltage resistance. PI has integrated 900V MOS. 13. Does IP industrial equipment auxiliary power supply have any unique solution to reduce heat generation? A: Reducing heat generation means reducing power loss. PI uses advanced power devices, such as Gan to reduce switching loss and conduction loss. At the same time, advanced control technology is used to reduce loss and improve efficiency. For example, InnoSwitch3 is used for 65W output flyback, with an efficiency of up to 95%. 14. Device PN junction temperature limit and package size A: The junction temperature is 150 degrees. PI's devices have OTP. The InnoSwitch3 series is across the primary and secondary sides, which means it can be placed under the transformer to save space. 15. What are the internal resistances of silicon carbide and gallium nitride devices? A: The current largest GaN is 0.29Ω, SiC is 0.45Ω, at 25℃. 16. What are the advantages of PI silicon carbide devices? A: The withstand voltage can be as high as 1700V, high reliability, and easy to use. 17. What are the solutions for suppressing output ripple? A: Choose a multi-mode controller and a control chip with faster dynamic response. PI's InnoSwitch3 is a good choice.