How to use a digital source meter to quickly test the electrical performance of discrete semiconductor devices?

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How to use a digital source meter to quickly test the electrical performance of discrete semiconductor devices? [Copy link]

Today I will tell you about the top semiconductors: discrete devices. Why are they called top devices? Simply put, discrete semiconductor devices are one of the core components of power electronic devices in the rectification, voltage regulation, switching, mixing and other circuits of the devices that you use and see in your daily life, such as household appliances, cars, computers, mobile phones, network communication equipment, etc.

Semiconductor discrete devices can be divided into different types according to different substrates. When silicon-based semiconductors are used as substrates, semiconductor discrete devices mainly include diodes, bipolar junction transistors (BJT), thyristors (SCR), field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), etc. When wide bandgap semiconductors are used as substrates, semiconductor discrete devices mainly include: SiC.GaN semiconductor power devices.

Next, we will focus on the characteristics of the most widely used diodes, transistors and MOS tubes and the key points of their electrical performance testing.

1. Diode

A diode is a unidirectional conductive component made of semiconductor materials. The product structure is generally a single PN junction structure, which only allows current to flow in one direction. So far, rectifier diodes, Schottky diodes, fast recovery diodes, PIN diodes, photodiodes, etc. have been developed one after another, with the characteristics of safety and reliability.

Device characteristics: Junction voltage drop, cannot be changed, you need to know how to observe the volt-ampere characteristics, the forward resistance is strong and the reverse resistance is soft, all measurements depend on it.

Test points : forward voltage drop test (VF), reverse breakdown voltage test (VR), CV characteristic test

2. Transistor

A transistor is made by making two PN junctions very close to each other on a semiconductor substrate. The two PN junctions divide the entire semiconductor into three parts. The middle part is the base region, and the two side parts are the emitter region and the collector region.

Device characteristics: Transistor is not simple, several characteristics must be remembered, input and output have curves, each with different depths.

Test points: Input/output characteristic test, inter-electrode reverse current test, reverse breakdown voltage test (VR), CV characteristic test

3. MOS tube

MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a common semiconductor device that uses electric field effect to control the current size. It can be widely used in analog circuits and digital circuits. MOSFET can be made of silicon, graphene, carbon nanotubes and other materials, and is a hot spot in material and device research. The main parameters include input/output characteristic curve, threshold voltage VGs(th), leakage current lGss, lDss, breakdown voltage VDss, low-frequency mutual conductance gm, output resistance RDs, etc.

Device characteristics: The arrow points inward, pointing to N, N-channel field effect transistor; the arrow points outward, pointing to P, P-channel field effect transistor.

Test points: Input/output characteristics test, threshold voltage test VGS(th), leakage current test, withstand voltage test, CV test

So, what is electrical performance testing? How to conduct electrical performance testing on discrete semiconductor devices?

The electrical performance test of semiconductor discrete devices is to apply voltage or current to the device under test and then test its response to the stimulus. Traditional discrete device characteristic parameter testing requires several instruments to complete, such as digital multimeter, voltage source, current source, etc.

One of the best tools for performing parameter analysis of discrete semiconductor device characteristics is a “five-in-one” source-meter instrument (SMU), which combines multiple functions into one.

The accurate, stable and efficient electrical performance test solution can provide the necessary measurement tools for university researchers, device test engineers and power module design engineers, greatly improving the test efficiency. In addition, based on the core high-precision digital source meter, Pusaisi also provides appropriate cable accessories and test fixtures to achieve safe and reliable testing.