Qorvo Launches Advanced Power Solutions for Phased Array Radar Systems

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Qorvo Launches Advanced Power Solutions for Phased Array Radar Systems [Copy link]

Three-chip solution provides configurable GAN bias point automatic calibration

BEIJING, China, February 9, 2023 -- Qorvo, Inc. (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, today announced a compact three-chip power solution for phased array radars. The three-chip solution provides configurable automatic calibration of GaN bias points, enabling engineers to maximize system performance of different GaN power amplifiers (PAs) without changing board design.

Qorvo's new chipset optimizes the pulse energy storage capacitor, one of the largest and most expensive components in phased array systems. The solution uses an innovative architecture to reduce capacitance by 90%, shrinking the system by 30%, while also reducing weight and operating costs.

“This complete radar power solution integrates Qorvo’s advanced technologies, combining an innovative power conversion architecture, best-in-class GaN RF power amplifiers and highly efficient and reliable silicon carbide FETs,” said Philip Chesley, president of Qorvo Infrastructure and Defense Products.

The new three-chip solution includes the following:

• The ACT43950 is a high-voltage constant-current capacitor charge controller that works with Qorvo's silicon carbide power switches to provide fully programmable output voltage and current, enabling customers to maximize system performance. The architecture of the regulator, combined with subsequent stages, minimizes energy storage capacitor requirements.

• The ACT43850 is a RF point-of-load (RFPoL) step-down DC-DC power converter that takes the output of the ACT43950 and steps it down to a regulated voltage optimized for Qorvo GaN power amplifiers. Its advanced configuration options enable RF system designers to minimize noise and electromagnetic interference, thereby maximizing the performance of radar arrays.

• The ACT43750 is a highly integrated drain switch and negative gate regulator PMIC that enables ultra-fast RF GaN power amplifier drain switching. By automating gate voltage bias sequencing, auto-calibration, and dynamic bias recalibration, Qorvo simplifies system manufacturing while reducing the impact of device aging and temperature on RF performance.

Qorvo offers an evaluation board (CB1-750-850-950) that enables customers to test the performance of this three-chip solution with a variety of RF GaN power amplifiers. The evaluation board features an intuitive graphical user interface (GUI) that allows customers to reconfigure the default settings to optimize the performance of their specific power amplifier, demonstrating reduced bulk capacitor requirements and automatic gate bias calibration. The evaluation board is designed with flexibility to evaluate individual stages or the entire three-chip solution with a single RF power amplifier, thereby reducing time to market.