Award-winning live broadcast | The new Infineon MOSFET based on Source-down technology effectively improves power density, which is visible to the naked eye
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Whether it is a switching power supply or a motor drive, engineers are usually tirelessly pursuing three "highs": higher efficiency, higher power density, and higher reliability. However, the existing PCB space is already very small. How to achieve these goals? This usually troubles design engineers. In order to solve the problem that has been bothering everyone for a long time, Infineon has innovatively launched a new power OptiMOS MOSFET based on Source-down technology to help customer engineers solve these design challenges. In this live broadcast, Infineon and its partner Pinjia Group will give you a comprehensive and detailed introduction to Infineon's innovative OptiMOS MOSFET. It will provide you with new ideas for your future design and is absolutely worth the money.
Live broadcast time: 10:00-11:30 am, April 20
Live Topic: New Infineon MOSFET based on Source-down technology effectively improves power density, which is visible to the naked eye
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Live lecturer:
Tsang Wai-kuen
Senior Marketing Manager of Infineon Power and Sensor Systems Division
Mr. Zeng has many years of experience in power electronics product development and has been with Infineon Technologies (China) Co., Ltd. for more than ten years. He is currently responsible for the product marketing of medium and low voltage power devices in Infineon Greater China, including new product promotion, new business development, etc.
Yagyu Wei
Mr. Liu has many years of R&D
experience in the power supply industry. He is currently working as an application engineering deputy manager at WPG Pinjia Group, responsible for technical support and product promotion of Infineon power device products.
Prize Setting
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