Semiconductor Device Physics (Shi Min)

EE大学堂

Semiconductor Device Physics (Shi Min) [Copy link]

 

The course content is gradually developed from the basic physics and the basic operation of capacitor structure, and then discusses the structure and operation of MOSFET and NVSM, allowing students to get a glimpse of the mystery of the most important semiconductor components.

1. Semiconductor Physics

2. The concept of pn junction

3. MOS Capacitor

4. Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

5. Non-Volatile Semiconductor Memory (NVSM)

About the Speaker

Simon M. Sze is an American national. He is an expert in microelectronics science and technology and semiconductor device physics. He is a professor at the Nano-Micro Component Laboratory of the Department of Electronic Engineering at National Chiao Tung University in Taiwan. He is a member of the National Academy of Engineering of the United States, the Chinese Academy of Engineering, and the three academicians of the Academia Sinica of Taiwan.
Born in 1936, he graduated from National Taiwan University in 1957. He received a master's degree and a doctorate from the University of Washington and Stanford University in 1960 and 1963 respectively. He worked at Bell Labs from 1963 to 1989. On May 14, 2014, he was appointed Honorary Professor of Harbin Institute of Technology.
Dr. Sze is an internationally renowned expert and educator in microelectronics science and technology and semiconductor devices.
He has made pioneering contributions in the fields of gold semiconductor contacts, microwave devices, and sub-micron metal semiconductor field effect crystal technology. He is the inventor of the non-volatile MOS field effect memory transistor (MOSFET), which has become one of the leading products in the world's integrated circuit industry. In the early 1990s, its output value reached 10 billion US dollars. It is a key component of mobile phones, laptops, IC cards, digital cameras and portable electronic products. In addition, he has many creative achievements, such as being the first to use electron beam to manufacture MOSFET devices with a line width of 0.15μm in the early 1980s, being the first to discover the relationship between breakdown voltage and energy gap, establishing an indicator of the maximum electric field of microelectronic components, and so on.

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huangjy211

It is a blessing to listen to the master's lecture. Thank you for sharing.