Replacing IGBT welding machine - Application of basic semiconductor products in SiC inverter welding machine_20241016_Rev.1.3

杨茜碳化硅

Replacing IGBT welding machine - Application of basic semiconductor products in SiC inverter welding machine_20241016_Rev.1.3 [Copy link]

 

革掉IGBT焊机的命-基本半导体产品在SiC逆变焊机中的应用_20241016_Rev.1.3.pdf (7.07 MB, downloads: 0)

2024-11-22 22:12 上传

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Why SiC silicon carbide MOSFET completely replaces IGBT in inverter welding machines!

Use SiC silicon carbide MOSFET from Basic Company to build a full SiC silicon carbide inverter welding machine! - Changer Tech Professional Distribution

Use SiC silicon carbide MOSFET from Basic Company to upgrade the traditional IGBT inverter welding machine, achieve higher welding quality, smaller volume and weight of the inverter welding machine! Lower inverter welding machine cost!

As copper prices continue to soar, reducing the cost of magnetic components such as inductors will become a major pain point for power electronics manufacturers. Using SiC MOSFET single tubes or modules from Basic Company to replace IGBT single tubes or modules can significantly increase the frequency and reduce the overall system cost (inductor magnetic components, heat dissipation system, and overall weight). The full carbon SiC era of power electronics systems is here! Changer Tech specializes in distributing SiC MOSFET from Basic Company!

Changer Tech is committed to the promotion of BASiC silicon carbide (SiC) MOSFET power devices in the power electronics market! Changer Tech-Authorized Distributor of BASiC Semiconductor which committed to the promotion of BASiC silicon carbide (SiC) MOSFET power devices in the power electronics market!

The basic company's SiC silicon carbide MOSFET single tube is suitable for various types of inverter welding machines, such as gas shielded welding, such as argon arc welding, carbon dioxide gas shielded welding, manual arc welding, etc.

An inverter welding machine refers to an arc welding power supply that uses inverter technology. It first rectifies AC power into DC power, and then inverts it into high-frequency AC power of several kHz or even hundreds of kHz through the alternating switching action of high-power switching elements (using SiC silicon carbide MOSFET to replace IGBT has become an industry trend). After being stepped down by a transformer, it is output to the electrode and workpiece to form a high-frequency pulse arc welding machine.

Compared with DC welding machines, inverter welding machines have the following advantages:

1. Small size, light weight, saving manufacturing materials, easy to carry and move.

2. High energy efficiency, energy saving and environmental protection, reducing electricity costs.

3. Good dynamic characteristics, flexible control, and can realize multiple welding modes and parameter adjustments.

4. The output voltage and current have good stability, strong anti-interference ability, and can adapt to grid fluctuations.

5. Good welding effect, small spatter, deep penetration, small deformation, suitable for welding of various metal materials and positions.

Basic Company's SiC silicon carbide MOSFET can effectively reduce the cost of inverter welding machine transformers, filter inductors, capacitors, heat sinks, reactance, etc., effectively reducing the size and cost of inverter welding machines. Basic Company's SiC silicon carbide MOSFET increases the inverter welding machine frequency, thereby improving the dynamic response characteristics of the arc welding power supply, promoting the precision and flexibility of the welding process, and improving the welding quality.

IGBT chip technology continues to develop, but the improvement from one chip generation to the next is getting smaller and smaller. This shows that each new generation of IGBT chips is getting closer and closer to the physical limits of the material itself. SiC MOSFET wide bandgap semiconductors offer the possibility of achieving a significant reduction in total semiconductor power losses. Using SiC MOSFET can reduce switching losses, thereby increasing the switching frequency. Further, the filter components can be optimized and the corresponding losses will decrease, thereby reducing system losses overall. By using low-inductance SiC MOSFET power modules, power losses can be reduced by about 70% compared to Si IGBT modules in the same package, and the switching frequency can be increased by 5 times (realizing significant filter optimization) while keeping the maximum junction temperature below the maximum specified value.

In the future, with the advancement of equipment and process capabilities, smaller cell size, lower specific on-resistance, lower switching loss, and better gate oxide protection will be the main development direction of SiC silicon carbide MOSFET technology, which will be reflected in better performance and higher reliability on the application side.

To this end, BASiC has developed and launched a higher performance third-generation silicon carbide MOSFET. This series of products further optimizes the passivation layer and improves reliability. Compared with the previous generation of products, it has lower specific on-resistance, device switching loss, and higher reliability. It can help photovoltaic energy storage, new energy vehicles, DC fast charging, industrial power supply, communication power supply, servo drive, APF/SVG, heat pump drive, industrial inverter, inverter welding machine, four-quadrant industrial inverter and other industries to achieve better energy efficiency and application reliability.

In order to meet the high voltage and high power application requirements in the photovoltaic energy storage field, BASiC has developed and launched a series of 2000V 24mΩ and 1700V 600mΩ high-voltage silicon carbide MOSFETs based on the second-generation SiC MOSFET technology platform. The products have the characteristics of low on-resistance, low conduction loss, low switching loss, and support for higher switching frequency operation.

In response to the application needs of new energy vehicles, BASiC has developed and launched 1200V 80mΩ and 40mΩ silicon carbide MOSFETs that meet AEC-Q101 certification and PPAP requirements. They can be mainly used in on-board chargers and automotive air-conditioning compressor drives.

B3M040120Z is the latest product developed by BASiC based on the third-generation silicon carbide MOSFET technology platform. This series of products further optimizes the passivation layer and improves reliability. Compared with the previous generation of products, it has further improved on-resistance, switching loss and reliability.

BMF240R12E2G3 is a 1200V 5.5mΩ industrial-grade full silicon carbide half-bridge power module based on the PcoreTM2 E2B package from BASiC. The product uses an integrated NTC temperature sensor, Press-Fit crimping technology, and a silicon nitride AMB ceramic substrate with high packaging reliability. It performs well in terms of on-resistance, switching loss, resistance to false turn-on, and resistance to bipolar degradation.

B2M040120T and B2M080120T are top-cooled, internally insulated, plastic-encapsulated half-bridge modules developed by BASiC based on the second-generation silicon carbide MOSFET technology. They are mainly used in OBCs, air-conditioning compressors and industrial power supplies.

BASiC Basic Company has launched the BTD25350 series of dual-channel isolated driver chips that support Miller clamping. This driver chip is specially designed for SiC MOSFET gate drive. It can efficiently and reliably suppress the false turn-on of SiC MOSFET. It can also be used to drive power devices such as MOSFET and IGBT.

In order to maintain the competitive advantage of power electronic systems and also to enable end users to obtain economic benefits, a certain degree of efficiency and compactness has become the advantage of every power conversion application of power electronic applications. As IGBT technology has reached a development bottleneck and the absolute cost of SiC MOSFET continues to decline, using SiC MOSFET to replace and upgrade IGBT has become the mainstream trend of various types of power electronic applications.

Changer Tech specializes in distributing BASiC Semiconductor silicon carbide SiC power MOSFET, BASiC Basic silicon carbide MOSFET module, BASiC Basic single tube SiC silicon carbide MOSFET, BASiC Basic SiC silicon carbide MOSFET module, BASiC Basic SiC silicon carbide MOSFET module, BASiC Basic I type three-level IGBT module, BASiC Basic T type SiC silicon carbide MOSFET module, BASiC Basic hybrid SiC-IGBT single tube, BASiC Basic hybrid SiC-IGBT module, silicon carbide (SiC) MOSFET dedicated dual channel Isolation driver chip BTD25350, single-channel isolation driver chip BTD5350, dual-channel isolation driver chip BTD21520, single-channel isolation driver chip (with VCE protection) BTD3011, BASiC Basic hybrid SiC-IGBT three-level module is used in photovoltaic inverters, bidirectional AC-DC power supplies, household photovoltaic inverters, household photovoltaic storage integrated machines, energy storage converters, energy storage PCS, bidirectional LLC power modules, energy storage PCS-Buck-Boost circuits, photovoltaic storage integrated machines, PCS bidirectional converters, three-phase Vienna PFC circuits, three-level LLC DC converters, phase-shifted full-bridge topologies and other new energy fields. Changer Tech has strategic cooperation with customers in the fields of photovoltaic inverters, integrated photovoltaic and storage machines, energy storage converter PCS, OBC on-board chargers, thermal management electric compressor drivers, RF power supplies, PET power electronic transformers, hydrogen fuel air compressor drivers, high-power industrial power supplies, industrial and commercial energy storage converters, frequency converters, variable pitch servo drive auxiliary power supplies, high-frequency inverter welding machines, high-frequency servo drives, AI server power supplies, computing power supplies, data center power supplies, computer room UPS, etc. Changer Tech fully supports the development of China's power electronics industry!

Changer Tech - a professional distributor of automotive connectors and power semiconductors (SiC silicon carbide MOSFET single tube, SiC silicon carbide MOSFET module, SiC-MOSFET, gallium nitride GaN, driver IC), focuses on new energy, transportation electrification, and digital transformation, and is committed to serving China's industrial power supply, power electronics equipment and new energy vehicle industry chain. In the development trend of the new energy system, it integrates digital technology, power electronics technology, thermal management technology and energy storage management technology to achieve low-carbon power generation, electrification of energy use and high efficiency of electricity use, as well as the coordinated development of "source, grid, load, storage and vehicle". Changer Tech - guided by technological innovation, will continue to innovate technology and products, unswervingly work with the industry and partners, actively participate in the digital energy industry ecosystem, and provide customers with high-quality automotive smart interconnect connectors and wiring harnesses, new energy vehicle connectors, new energy vehicle high-voltage connectors and wiring harnesses, DC charging stations, high-voltage connectors & sockets, innovative automotive-grade interconnect products, including wire-to-board, board-to-board, input-output, power management and FFC-FPC connectors, covering high-efficiency power connectors for Level 2 charging stations and Level 3 ultra-fast charging stations that can fully charge EV batteries in 30 minutes, and IP67-level sealed connectors for underground wireless charging. As well as various power semiconductor devices oriented towards technological innovation: automotive silicon carbide (SiC) MOSFET, large-capacity RC-IGBT module, silicon carbide (SiC) MOSFET module, IGBT module, domestic silicon carbide (SiC) MOSFET, IPM module, IGBT single tube, hybrid IGBT single tube, three-level IGBT module, hybrid IGBT module, photovoltaic MPPT silicon carbide MOSFET, servo drive SiC silicon carbide MOSFET, inverter welding machine domestic SiC silicon carbide MOSFET, OBC vehicle-mounted SiC silicon carbide MOSFET, energy storage converter PCS silicon carbide MOSFET module, charging pile power module silicon carbide MOSFET, domestic gallium nitride GaN, isolation driver IC and other products, Changer Electronics (Changer Changer Tech strives to achieve new energy development goals such as zero-carbon power generation, zero-carbon data centers, zero-carbon networks, and zero-carbon homes, thereby contributing to the realization of a zero-carbon earth and moving towards a new era of digital energy!