On March 10, 2022, Cailianshe reported that CICC believes that the extreme performance of silicon carbide substrates is better than that of silicon substrates and can meet application requirements under high temperature, high pressure, high frequency, and high power conditions. Currently, silicon carbide substrates have been used in RF devices and power devices.
CICC divides the development of SiC devices into three stages: 2019-2021 is the initial stage; 2022-2023 is the turning point period; and 2024-2026 is the explosive growth period.
CICC believes that as SiC is applied in new energy vehicles, charging infrastructure, 5G base stations, industry, energy and other fields, the demand is experiencing explosive growth. Among them, new energy vehicles are the fastest growing market for SiC device applications, and the market size is expected to increase from US$1.6 billion to US$4.6 billion from 2022 to 2026.
It is particularly worth mentioning that local companies have made certain breakthroughs in the field of automotive SiC. Last December, at the first Jiwei Automotive Semiconductor Ecosystem Summit, Zhou Xiaoyang, president of Guangdong Xinju Energy Semiconductor Co., Ltd., also stated that the Xinju Energy SiC module will be used for the main inverter and has passed the vehicle reliability test, summer calibration and durability test of the top three domestic OEMs, and the system environmental durability test assessment, and is expected to be mass-produced in Q1 2022.
In the same month, the new generation product C-Power 220s, incubated by CRRC Times Electric's C-Car platform, was officially released at the Second New Energy Passenger Vehicle Autonomous Electric Drive Innovation Technology Summit Forum. This product is the first domestic high-power electric drive product based on autonomous SiC, with a system efficiency of up to 94%.
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