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Development of GaN-based light-emitting diode synthetic lighting source

  • 2013-09-22
  • 454.37KB
  • Points it Requires : 2

  The lumen efficiency of GaN-based light-emitting diodes is still far from the world-recognized target of 200 lm/W. The latest progress in key technologies of material epitaxy, tube core manufacturing, device packaging, system development and application, and lighting sources is described in detail.

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