The FM18L08 is a 256-kilobit nonvolatile memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolatile and reads and writes like a RAM. Itprovides data retention for 45 years while eliminatingthe reliability concerns, functional disadvantages andsystem design complexities of battery-backed SRAM(BBSRAM). Fast write timing and high writeendurance make FRAM superior to other types ofnonvolatile memory.In-system operation of the FM18L08 is very similarto other RAM based devices. Read cycle and writecycle times are equal. The FRAM memory, however,is nonvolatile due to its unique ferroelectric memoryprocess. Unlike BBSRAM, the FM18L08 is a trulymonolithic nonvolatile memory. It provides the samefunctional benefits of a fast write without thedisadvantages associated with modules and batteriesor hybrid memory solutions.These capabilities make the FM18L08 ideal fornonvolatile memory applications requiring frequentor rapid writes in a bytewide environment. Theavailability of a surface-mount package improves themanufacturability of new designs, while the DIPpackage facilitates simple design retrofits. Devicespecifications are guaranteed over a temperaturerange of -40°C to +85°C.
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