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Characteristic Analysis of SiCOI MESFET

  • 2013-09-22
  • 416.41KB
  • Points it Requires : 2

The electrical characteristics of SiCOI MESFET were simulated and analyzed using ISE-TCAD 2D device simulation software. The results show that adjusting device structural parameters, such as gate length, active layer doping concentration, active region thickness, etc., has a significant impact on the device transfer characteristics and output characteristics.

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