The technology for building a 1 000 t electronic grade polysilicon plant was discussed. The quality, safety, feasibility of transportation and storage, useful deposition ratio, deposition rate, primary conversion rate, growth temperature, power consumption and price of polysilicon produced by the trichlorosilane method, silicon tetrachloride method, dichlorodihydrogen silicon method and silane method were compared; the reactors used for reduction or thermal decomposition, namely bell reactor, fluidized bed reactor and free space reactor, were also compared. The three-generation process of producing polysilicon using the trichlorosilane bell reactor method was introduced. The third-generation polysilicon process is suitable for the production of 1 000 t/a electronic grade polysilicon.
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