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Research on a Low-Temperature Drift CMOS Bandgap Voltage Reference

  • 2018-06-29
  • 1013.71KB
  • Points it Requires : 2

The core part of the circuit is composed of bipolar transistors, which realizes the linear superposition of VBE and VT and obtains an output voltage with an approximate zero temperature coefficient. T-SPICE software simulation shows that under a 3.3 V power supply voltage, when the temperature changes between -20 and 70 °C, the temperature coefficient of the output voltage of the circuit is 10×10-6/°C, the standard deviation of the output voltage is 1 mV, and the power consumption of the circuit is 5.283 1 mW at room temperature, which is a low-temperature drift and low-power reference voltage source.

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