S-band radar receiver front-end low noise amplifier: A low noise amplifier for the front-end circuit of the S-band radar receiver is designed using 0.35 m SiGe BiCMOS technology. For modern wireless receivers, their dynamic range and sensitivity depend largely on the noise performance and linearity of the low noise amplifier. Compared with the CMOS process, the SiGe BiCMOS process has a higher cutoff frequency, better noise performance and higher current gain, which is very suitable for the design of microwave integrated circuits. The low noise amplifier adopts a three-stage amplifier cascade structure to meet the gain requirement of up to 30 dB. Under a power supply voltage of 5 V, it meets the absolute stability condition. In the 3 GHz to 3.5 GHz frequency band, the power gain is 34.5 dB, the noise figure is 1.5 dB, and the output 1 dB power compression point is 11 dBm. Keywords: radar receiver; low noise amplifier; BiCMOS
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