1. Chinese semiconductor device model naming method The semiconductor device model consists of five parts (field effect device, semiconductor special device, composite tube, PIN tube, laser device model naming only has the third, fourth and fifth parts). The meanings of the five parts are as follows: Part 1: Use numbers to indicate the number of effective electrodes of the semiconductor device. 2-Diode. 3-Transistor Part 2: Use Chinese phonetic letters to indicate the material and polarity of the semiconductor device. When indicating a diode: AN type germanium material. BP type germanium material. CN type silicon material. DP type silicon material. When indicating a transistor: A-PNP type germanium material. B-NPN type germanium material. C-PNP type silicon material. D-NPN type silicon material. Part 3: Use Chinese phonetic letters to indicate the internal type of the semiconductor device. P-ordinary tube. V-microwave tube. W-voltage regulator tube. C-parameter tube. Z-rectifier tube. L-rectifier stack. S-tunnel tube. N-damping tube. U-photoelectric device. K-switching tube. X-low frequency low power tube (F 3MHz, Pc 1W). A-high frequency high power tube (f>3MHz, Pc>1W). T-semiconductor thyristor (controlled rectifier). Y-body effect device. B-avalanche tube. J-step recovery tube. CS-field effect tube. BT-special semiconductor device. FH-composite tube. PIN-PIN type tube. JG-laser device. Part 4: Use numbers to indicate serial numbers Part 5: Use Chinese phonetic letters to indicate specification numbers
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