A new anodizing technology for porous silicon: Oxidizing porous silicon under appropriate conditions is a good way to improve the luminescence intensity of porous silicon. A new anodizing method is proposed, and the anodizing conditions involved in this method are discussed. The initial porous silicon was wet anodized using an HF acid aqueous solution containing CH3CSNH2 as an oxidant. It was found that oxidation greatly improved the photoluminescence properties of porous silicon. The effects of a series of factors such as oxidation current, oxidation temperature, and oxidation time on the photoluminescence intensity of oxidized porous silicon were studied, and a reasonable explanation was given. The experiment found that under the oxidation conditions of 1 mA, 10 min, and 60 ℃, the luminescence intensity of porous silicon was enhanced by 18 times using anodizing technology. Keywords: porous silicon (PS); wet oxidation; photoluminescence (PL)
You Might Like
Recommended ContentMore
Open source project More
Popular Components
Searched by Users
Just Take a LookMore
Trending Downloads
Trending ArticlesMore