D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8
B G A 4 16
RF Cascode Amplifier
S m a l l S i g n a l D i s c r et e s
Edition 2008-04-21
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2008.
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as a guarantee of
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circuits, descriptions and charts stated herein.
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BGA416
BGA416, RF Cascode Amplifier
Revision History: 2008-04-21, Rev. 2.1
Previous Version: 2005-07-26
Page
All
4-5
7-8
Subjects (major changes since last revision)
Document layout change
Electrical Characteristics slightly changed
Figures updated
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2008-04-21
BGA416
RF Cascode Amplifier
1
RF Cascode Amplifier
Feature
•
G
MA
= 23 dB at 900 MHz
• Ultra high reverse isolation, 60 dB at 900 MHz
• Low noise figure,
F
50Ω
= 1.2 dB at 900 MHz
• On chip bias circuitry, 5.5 mA bias current at
V
CC
= 3 V
• Typical supply voltage: 2.5 to 5.0 V
• SIEGET
®
-25 technology
• Pb-free (RoHS compliant) package
3
2
4
1
Applications
• Buffer amplifier
• LNAs
• Oscillator active devices
SOT143
GND, 1
Bias
RFout, 4
RFin, 2
GND, 3
BGA 416_Pin_connection.vsd
Figure 1
Description
Pin connection
BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for
simplified biasing.
Type
BGA416
Package
SOT143
Marking
C1s
Note:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2008-04-21
BGA416
Electrical Characteristics
Maximum Ratings
Table 1
Parameter
Voltage at pin RFout
Device current
1)
Current into pin RFin
Input power
Total power dissipation,
T
S
< 123°C
2)
Junction temperature
Ambient temperature range
Storage temperature range
Maximum ratings
Symbol
Limit Value
6
20
0.5
8
100
150
-65... 150
-65... 150
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
OUT
I
D
I
in
P
in
P
tot
T
J
T
A
T
STG
1) Device current is equal to current into pin RFout
2)
T
S
is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Thermal resistance
Symbol
Value
Unit
K/W
Junction - soldering point
1)
R
thJS
270
1) For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Electrical Characteristics
Electrical characteristics at
T
A
= 25 °C (measured in test circuit specified in
Figure 2)
V
CC
= 3 V, unless otherwise specified
Table 3
Parameter
Maximum available power gain
Insertion power gain
Reverse isolation
Noise figure (
Z
S
= 50
Ω)
Output power at 1 dB gain
compression (
Z
S
=
Z
L
= 50
Ω)
Output third order intercept point
(
Z
S
=
Z
L
= 50
Ω)
Device current
Data Sheet
Electrical Characteristics
Symbol
Min.
Values
Typ.
23
14
17
11
60
40
1.2
1.6
-3
-3
14
14
5.5
5
Max.
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
Rev. 2.1, 2008-04-21
Unit
Note /
Test Condition
G
MA
|S
21
|
2
|S
12
|
F
50Ω
P
-1dB
OIP
3
I
D
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
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