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CY7C1414KV18-300BZC

Description
SRAM 36MB (1Mx36) 1.8v 300MHz QDR II SRAM
Categorystorage   
File Size3MB,33 Pages
ManufacturerCypress Semiconductor
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CY7C1414KV18-300BZC Overview

SRAM 36MB (1Mx36) 1.8v 300MHz QDR II SRAM

CY7C1414KV18-300BZC Parametric

Parameter NameAttribute value
Product CategorySRAM
ManufacturerCypress Semiconductor
RoHSNo
Memory Size36 Mbit
Organization1 M x 36
Access Time0.45 ns
Maximum Clock Frequency300 MHz
Interface TypeParallel
Supply Voltage - Max1.9 V
Supply Voltage - Min1.7 V
Supply Current - Max850 mA
Minimum Operating Temperature0 C
Maximum Operating Temperature+ 70 C
Mounting StyleSMD/SMT
Package / CaseFBGA-165
PackagingTray
Memory TypeQDR
Moisture SensitiveYes
Factory Pack Quantity136
TypeSynchronous
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
36-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
36-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1425KV18 – 4M × 9
CY7C1412KV18 – 2M × 18
CY7C1414KV18 – 1M × 36
Separate independent read and write data ports
Supports concurrent transactions
333 MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) Interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR
®
II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (±0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free Packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Phase locked loop (PLL) for accurate data placement
Functional Description
The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1425KV18), 18-bit words (CY7C1412KV18), or
36-bit words (CY7C1414KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
×9
× 18
× 36
333 MHz
333
730
750
910
300 MHz
300
680
700
850
250 MHz
250
590
610
730
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-57825 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 16, 2016

CY7C1414KV18-300BZC Related Products

CY7C1414KV18-300BZC CY7C1414KV18-250BZXI CY7C1425KV18-250BZXI CY7C1425KV18-250BZCT CY7C1412KV18-333BZXI
Description SRAM 36MB (1Mx36) 1.8v 300MHz QDR II SRAM Buffers u0026 Line Drivers SINGLE BUS BUFFER GATE SRAM 36MB (4Mx9) 2.9v 250MHz QDR II SRAM SRAM 36MB (2Mx18) 1.8v 333MHz QDR II SRAM
Product Category SRAM - SRAM SRAM SRAM
Manufacturer Cypress Semiconductor - Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
RoHS No - Details No Details
Memory Size 36 Mbit - 36 Mbit 36 Mbit 36 Mbit
Organization 1 M x 36 - 4 M x 9 4 M x 9 2 M x 18
Access Time 0.45 ns - 0.45 ns 0.45 ns 0.45 ns
Maximum Clock Frequency 300 MHz - 250 MHz 250 MHz 333 MHz
Interface Type Parallel - Parallel Parallel Parallel
Supply Voltage - Max 1.9 V - 1.9 V 1.9 V 1.9 V
Supply Voltage - Min 1.7 V - 1.7 V 1.7 V 1.7 V
Supply Current - Max 850 mA - 590 mA 590 mA 750 mA
Minimum Operating Temperature 0 C - - 40 C 0 C - 40 C
Maximum Operating Temperature + 70 C - + 85 C + 70 C + 85 C
Mounting Style SMD/SMT - SMD/SMT SMD/SMT SMD/SMT
Package / Case FBGA-165 - FBGA-165 FBGA-165 FBGA-165
Packaging Tray - Tray Reel Tray
Memory Type QDR - QDR QDR QDR
Moisture Sensitive Yes - - Yes Yes
Factory Pack Quantity 136 - 136 1000 136
Type Synchronous - Synchronous Synchronous Synchronous
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