EEWORLDEEWORLDEEWORLD

Part Number

Search

IKW50N65F5FKSA1

Description
Precision Amplifiers High VTG RRIO Prec Op Amps E-Trim
Categorysemiconductor    Discrete semiconductor   
File Size2MB,17 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IKW50N65F5FKSA1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IKW50N65F5FKSA1 - - View Buy Now

IKW50N65F5FKSA1 Overview

Precision Amplifiers High VTG RRIO Prec Op Amps E-Trim

IKW50N65F5FKSA1 Parametric

Parameter NameAttribute value
Product CategoryIGBT Transistors
ManufacturerInfineon
RoHSDetails
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.6 V
Maximum Gate Emitter Voltage+/- 20 V
Continuous Collector Current at 25 C80 A
Pd - Power Dissipation305 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
Gate-Emitter Leakage Current100 nA
Factory Pack Quantity240
TechnologySi
Unit Weight1.340411 oz
IGBT
Highspeed5FASTIGBTinTRENCHSTOP
TM
5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号