CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. All voltages are with respect to GND.
Electrical Specifications
ISL8843A -
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
DD
= 15V, RT = 10kΩ, CT = 3.3nF, T
A
= -40 to 105°C (Note 3) Typical values
are at T
A
= 25°C
PARAMETER
UNDERVOLTAGE LOCKOUT
START Threshold
STOP Threshold
Hysteresis
Startup Current, I
DD
Operating Current, I
DD
Operating Supply Current, I
D
REFERENCE VOLTAGE
Overall Accuracy
Long Term Stability
Current Limit, Sourcing
Current Limit, Sinking
CURRENT SENSE
Input Bias Current
CS Offset Voltage
COMP to PWM Comparator Offset Voltage
Input Signal, Maximum
Gain, A
CS
=
∆V
COMP
/∆V
CS
CS to OUT Delay
ERROR AMPLIFIER
Open Loop Voltage Gain
Unity Gain Bandwidth
Reference Voltage
TEST CONDITIONS
MIN
TYP
MAX
UNITS
8.0
7.3
-
V
DD
< START Threshold
(Note 4)
Includes 1nF GATE loading
-
-
-
8.4
7.6
0.8
90
2.9
4.75
9.0
8.0
-
125
4.0
5.5
V
V
V
µA
mA
mA
Over line (V
DD
= 12V to 18V), load,
temperature
T
A
= 125°C, 1000 hours (Note 5)
4.925
-
-20
5
5.000
5
-
-
5.050
-
-
-
V
mV
mA
mA
V
CS
= 1V
V
CS
= 0V (Note 5)
V
CS
= 0V (Note 5)
0 < V
CS
< 910mV, V
FB
= 0V
-1.0
95
0.80
0.97
2.5
-
-
100
1.15
1.00
3.0
35
1.0
105
1.30
1.03
3.5
55
µA
mV
V
V
V/V
ns
(Note 5)
(Note 5)
V
FB
= V
COMP
60
1.0
2.475
90
1.5
2.500
-
-
2.530
dB
MHz
V
4
FN9238.1
January 3, 2006
ISL8843
Electrical Specifications
ISL8843A -
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
DD
= 15V, RT = 10kΩ, CT = 3.3nF, T
A
= -40 to 105°C (Note 3) Typical values
are at T
A
= 25°C
(Continued)
PARAMETER
FB Input Bias Current
COMP Sink Current
COMP Source Current
COMP VOH
COMP VOL
PSRR
OSCILLATOR
Frequency Accuracy
Frequency Variation with V
DD
Temperature Stability
Amplitude, Peak to Peak
RTCT Discharge Voltage (Valley Voltage)
Discharge Current
OUTPUT
Gate VOH
Gate VOL
Peak Output Current
Rise Time
Fall Time
GATE VOL UVLO Clamp Voltage
PWM
Maximum Duty Cycle
Minimum Duty Cycle
NOTES:
3. Specifications at -40°C
and 105°C
are guaranteed by
25°C test with margin limits.
4. This is the V
DD
current consumed when the device is active but not switching. Does not include gate drive current.
5. Guaranteed by design, not 100% tested in production.
COMP = VREF
COMP = GND
93.5
-
95
-
-
0
%
%
V
DD
- OUT, I
OUT
= -200mA
OUT - GND, I
OUT
= 200mA
C
OUT
= 1nF (Note 5)
C
OUT
= 1nF (Note 5)
C
OUT
= 1nF (Note 5)
VDD = 5V, I
LOAD
= 1mA
-
-
-
-
-
-
1.0
1.0
1.0
20
20
-
2.0
2.0
-
40
40
1.2
V
V
A
ns
ns
V
Initial, T
A
= 25°C
T
A
= 25°C, (F
30V
- F
9V
)/F
30V
(Note 5)
Static Test
Static Test
RTCT = 2.0V
48
-
-
-
-
6.5
51
0.2
-
1.75
1.0
7.8
53
1.0
5
-
-
8.5
kHz
%
%
V
V
mA
TEST CONDITIONS
V
FB
= 0V
V
COMP
= 1.5V, V
FB
= 2.7V
V
COMP
= 1.5V, V
FB
= 2.3V
V
FB
= 2.3V
V
FB
= 2.7V
Frequency = 120Hz, V
DD
= 12V to
18V (Note 5)
MIN
-1.0
1.0
-0.4
4.80
0.4
60
TYP
-0.2
-
-
-
-
80
MAX
1.0
-
-
VREF
1.0
-
UNITS
µA
mA
mA
V
V
dB
Electrical Specifications
ISL8843M
-
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
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