Bipolar Transistors - BJT 1000W -80Vceo
Parameter Name | Attribute value |
Product Category | Bipolar Transistors - BJT |
Manufacturer | Diodes |
RoHS | Details |
Mounting Style | SMD/SMT |
Package / Case | SOT-89-3 |
Transistor Polarity | PNP |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V |
Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 1 A |
Gain Bandwidth Product fT | 200 MHz |
Maximum Operating Temperature | + 150 C |
DC Collector/Base Gain hfe Min | 63 |
Height | 1.5 mm |
Length | 4.5 mm |
Minimum Operating Temperature | - 55 C |
Packaging | Reel |
Packaging | Cut Tape |
Pd - Power Dissipation | 1000 mW |
Factory Pack Quantity | 2500 |
Width | 2.48 mm |
Unit Weight | 0.004603 oz |