NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
Parameter Name | Attribute value |
package instruction | SMALL OUTLINE, R-PDSO-G5 |
Contacts | 5 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | BUILT IN BIAS RESISTOR RATIO IS 2.13 |
Maximum collector current (IC) | 0.1 A |
Collector-emitter maximum voltage | 50 V |
Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 50 |
JESD-30 code | R-PDSO-G5 |
Number of components | 2 |
Number of terminals | 5 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 250 MHz |
VCEsat-Max | 0.3 V |
Base Number Matches | 1 |