Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | Toshiba Semiconductor |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TSON-Advance-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 18 A |
Rds On - Drain-Source Resistance | 50 mOhms |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 7 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Triple Common Source |
Channel Mode | Enhancement |
Packaging | Reel |
Fall Time | 4.5 ns |
Height | 0.85 mm |
Length | 3.1 mm |
Pd - Power Dissipation | 39 W |
Rise Time | 5.2 ns |
Factory Pack Quantity | 5000 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 14 ns |
Width | 3.1 mm |