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TPN5900CNHL1Q

Categorysemiconductor    Discrete semiconductor   
File Size230KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TPN5900CNHL1Q Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerToshiba Semiconductor
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSON-Advance-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance50 mOhms
Vgs th - Gate-Source Threshold Voltage4 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationTriple Common Source
Channel ModeEnhancement
PackagingReel
Fall Time4.5 ns
Height0.85 mm
Length3.1 mm
Pd - Power Dissipation39 W
Rise Time5.2 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time14 ns
Width3.1 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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